The invention relates to a wafer stage encapsulation LED (light emitting diode), and relates to LED encapsulation. The wafer stage encapsulation LED is provided with an LED chip, a lens and a lens bonding layer, wherein the LED chip is provided with a substrate layer, a doping semiconductor layer, a semiconductor luminous layer, a conducting reflecting layer, an electrode, an insulation layer and a coating medium, wherein the semiconductor luminous layer is arranged between the first doping semiconductor layer and the second doping semiconductor layer; the conducting reflecting layer is arranged under the second doping semiconductor layer; the second electrode realizes the electric conduction with the second doping semiconductor layer through the conducting reflecting layer; the first electrode and the first doping semiconductor layer are directly connected; the insulation among the first electrode, the semiconductor luminous layer, the second doping semiconductor layer and the conducting reflection layer is realized by an insulation layer; the coating medium is arranged on a non-substrate region of the side wall of the LED chip; a through hole is formed inside the substrate layer; the inner wall of the through hole is provided with a high-reflectivity layer; the lens comprises a flat plate part and an optical coupling part; the flat plate part is fixed onto the substrate layer; the optical coupling part is arranged in the through hole of the substrate layer; in addition, the optical receiving surface of the optical coupling part faces the first doping semiconductor layer.