The invention provides an integral erasure device of a phase-change memory. On the basis of an excising phase-change memory, the integral erasure device comprising an erasure enable switch, a word line voltage generation circuit, an erasure voltage generation circuit, a bit line erasure switching circuit and word line erasure switches is mainly added independently to avoid limitations of a binary-system one-hot coding decoder. The integral erasure device of the phase-change memory has the advantages that when the integral erasure device is capable of erasing enable signals integrally effectively, all word line erasure switches are switched on, all gate tubes of all phase-change storage units are turned on, and erasure voltage is transmitted to bit lines through the bit line erasure switching circuit to erase the phase-change memory quickly, so that the defect that the whole phase-change memory is erased for a long time every time and tens of thousands of, millions of and even more times of erasure operation is required due to the fact that the phase-change memory has no one-time integral erasure function in the prior art is overcome effectively.