The invention discloses a method for improving SRAM performance. The method comprises the following steps: P-type work function layers are formed on the surface of a gate dielectric layer of a P-type logic device region, and the P-type work function layer with the largest equal work function value is a first P-type work function layer; a pull up work function layer is formed on the surface of a gate dielectric layer of a pull up transistor region, and the material and thickness of the pull up work function layer are the same as the material and thickness of the first P-type work function layer; first threshold voltage adjusting doping processing is carried out on the substrate of the pull up transistor region; N-type work function layers are formed on the surface of a gate dielectric layer of an N-type logic device region, and the N-type work function layer with the largest equal work function value is a first N-type work function layer; a pass gate work function layer is formed on the surface of a gate dielectric layer of a pass gate transistor region, and the pass gate work function layer has the same material and thickness as the first N-type work function layer; and second threshold voltage adjusting doping processing is carried out on the substrate of the pass gate transistor region. According to the invention, the write redundancy of the memory and the overall performance of the semiconductor device are improved.