利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN106876318B 半导体器件及其制造方法 有权

半导体器件及其制造方法
摘要：
一种半导体器件及其制造方法，所述制造方法包括：形成具有掺杂离子的衬底，包括器件区域和围绕器件区域的保护环区域；在保护环区域的衬底内形成与衬底的掺杂离子类型不同的深阱埋层；在深阱埋层上方的保护环区域衬底内形成环绕保护环区域的第一阱区以及环绕第一阱区的第二阱区，第一阱区和第二阱区均与深阱埋层相连并延伸至衬底表面，且掺杂离子类型与衬底不同；在衬底表面形成保护环结构。本发明通过形成深阱埋层、第一阱区和第二阱区，构成封闭的抗干扰护栏，由于深阱埋层、第一阱区和第二阱区的掺杂离子类型与衬底不同，因此构成的抗干扰护栏可以隔绝保护环区域的衬底，从而防止干扰信号通过保护环结构进入衬底内而影响其他器件的电学性能。
摘要（英）：

A semiconductor device and a fabrication method are provided. The semiconductor device is fabricated by providing a substrate with a device area surrounded by a seal ring area, forming a buried deep-well layer in the substrate of the seal ring area, forming a first well region and a second well region in the substrate above the buried deep-well layer with the first well region surrounding the device area and the second well region surrounding the first well region, forming a heavily doped region in the substrate above the buried deep-well layer and between the first well region and the second well region, and forming a seal ring structure connecting to the heavily doped region. The buried deep-well layer, the first well region, and the second well region all have a first doping type while the heavily doped region and the substrate have a second doping type.

公开/授权文献
0/0