A silicon controlled rectifier circuit for electrostatic discharge protection of a radio frequency port comprises a pull-up silicon controlled rectifier, a pull-down silicon controlled rectifier, a first current-limiting resistor, a second current-limiting resistor, a third current-limiting resistor and a fourth current-limiting resistor. The characteristics of low trigger voltage of a gate-grounded N-type metal-oxide-semiconductor transistor (GGNMOS) and low parasitic capacitance of a silicon controlled rectifier (SCR) are combined, poly-silicon is embedded into the silicon controlled rectifier, so that the characteristics of low trigger voltage and low parasitic capacitance are achieved. Moreover, the silicon controlled rectifier employs an axial symmetric well structure, and the current-limiting resistors are additionally arranged and are used for improving robustness of an electrostatic discharge protection (ESD) circuit.