The invention provides a polysilicon stress sensor structure for through-silicon via interconnection and a preparation method thereof. The method comprises the following steps: (1) providing a silicon substrate, and forming an annular deep groove in the silicon substrate; (2) forming a first insulating layer on the surface of the silicon substrate and on the sidewall of the annular deep groove; (3) forming a polysilicon resistor in the annular deep groove, and forming polysilicon leads in the annular deep groove and on the surface of the silicon substrate; (4) forming a second insulating layer o the surfaces of the polysilicon resistor and the polysilicon lead; (5) forming a polysilicon filler layer in the annular deep groove above the polysilicon resistor; and (6) forming metal bonding pads on the surface of the polysilicon lead on the surface of the silicon substrate. The polysilicon stress sensor structure for through-silicon via interconnection of the invention is suitable for through-silicon via interconnection stress test and monitoring, and has the advantages of simple test simple, convenient operation and high test precision. The preparation method of the polysilicon stress sensor structure for through-silicon via interconnection has simple process steps, and is conductive to industrial production.