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发明授权
CN106952728B 利用大气压低温等离子体提高电容器储能密度的方法 有权

利用大气压低温等离子体提高电容器储能密度的方法
摘要：
本发明涉及一种利用大气压低温等离子体提高电容器储能密度的方法，包括：将待处理的电容器薄膜清洗、干燥；选定大气压低温等离子体产生设备，将所述电容器薄膜放置于大气压低温等离子体产生设备的等离子体产生区域；选定高压电源、前驱物和工作气体的种类，并调整放电参数和工作气体流速；进行等离子体沉积处理。本发明利用大气压低温等离子体处理电容器薄膜，电容器薄膜表面击穿场强可提高17％及以上,储能密度提高23％及以上。
摘要（英）：

The invention relates to a method of increasing the energy storage density of a capacitor through atmospheric pressure low temperature plasmas. The method comprises the following steps: cleaning and drying a to-be-processed capacitor film; selecting atmospheric pressure low temperature plasma generation equipment, and placing the capacitor film in a plasma generation area of the atmospheric pressure low temperature plasma generation equipment; selecting types of a high-voltage power source, a predecessor and working gas, and adjusting discharge parameters and the flow speed of the working gas; and carrying out plasma deposition. Atmospheric pressure low temperature plasmas are utilized to process the capacitor film, the breakdown field intensity of the surface of the capacitor film reaches above 17%, and the energy storage density is increased by over 23%.

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