The invention provides a semiconductor device, a production method thereof, and an electronic device. The production method of the semiconductor device comprises steps that a semiconductor substrate is provided, and an interlayer dielectric layer is formed on the semiconductor substrate, and is provided with a through hole; the through hole is completely filled with a bottom electrode material layer; a phase change material layer is deposited to cover the bottom electrode material layer, and the material of the phase change material layer is nitrogen-doped GeSbTe. During implementation of a back-end production technology, the stability of the components of the GeSbTe of the phase material layer is maintained.