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发明公开
CN106972396A VFTO抑制装置、阻尼母线单元、母线及GIS 无效 - 驳回 转让

VFTO抑制装置、阻尼母线单元、母线及GIS
摘要：
本发明涉及高压电器领域，特别是涉及到了一种VFTO抑制装置、阻尼母线单元、母线及GIS。VFTO抑制装置包括套式的绝缘外壳，所述绝缘外壳的壁中设置有至少一个磁环。本发明的VFTO抑制装置通过在磁环外部设置绝缘外壳的方式，杜绝了磁环铁氧体材料掉渣、掉块以及碰损（掉块、断裂等）的问题的出现，从而可实际应用于GIS中，结构简单，无动作部件，从而可简化GIS隔离开关的结构，降低GIS成本。
摘要（英）：

The present invention belongs to the high-voltage electrical appliance field and relates to a VFTO (Very Fast Transient Overvoltage) suppression device, a damping busbar unit, a busbar and a GIS (Gas Insulated Switchgear). The VFTO suppression device comprises a nested insulating housing; and at least one magnetic ring is arranged in the wall of the insulating housing. According to the VFTO suppression device of the invention, the insulating housing is arranged outside the magnetic rings, and therefore, the problems such as the scaling, chipping and collision-caused damage (for example chipping and fracture) of the ferrite materials of the magnetic rings can be avoided, and therefore, the VFTO suppression device can be actually applied to the GIS. The VFTO suppression device is simple in structure and is provided with no action components, and therefore, the structure of the disconnecting switch of the GIS can be simplified, and the costs of the GIS can be reduced.

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