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发明公开
CN107017202A 晶片的加工方法 无效 - 驳回

晶片的加工方法
摘要：
本发明的课题在于提供晶片的加工方法，即使在采用了硬度较高的基板来作为层叠功能层的晶片的情况下，也能够使各个分离得到的器件较薄。一种晶片的加工方法，将在基板的上表面上隔着缓冲层层叠有功能层并在正面上具有由分割预定线划分的多个器件的晶片沿着分割预定线分割成各个器件，其中，该晶片的加工方法具有如下的工序：切断工序，沿着分割预定线至少将功能层切断；保护部件配设工序，在晶片的正面上配设保护部件；缓冲层破坏工序，将对于基板具有透过性的波长的激光光线的聚光点定位于缓冲层而进行照射从而将缓冲层破坏；以及基板剥离工序，将该基板从功能层剥离而分离成每个器件。
摘要（英）：

A wafer is divided into a plurality of individual devices along a plurality of division lines, the wafer being composed of a substrate and a functional layer formed on the upper surface of the substrate through a buffer layer. The functional layer is partitioned by the division lines to define a plurality of separate regions where the devices are formed on the front side of the wafer. At least the functional layer is cut along the division lines. A protective member is provided on the front side of the wafer. The buffer layer is broken by applying a laser beam having a transmission wavelength to the substrate with the focal point of the laser beam set in the buffer layer, thereby breaking the buffer layer. The substrate is peeled from the functional layer, thereby forming the individual devices from the functional layer.

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