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发明公开
CN107022354A 量子点、其制造方法、量子点‑聚合物复合物和包括其的电子装置 有权

量子点、其制造方法、量子点‑聚合物复合物和包括其的电子装置
摘要：
本发明涉及量子点、其制造方法、量子点‑聚合物复合物和包括其电子装置。量子点具有钙钛矿晶体结构和包括由化学式1表示的化合物，其中，A为选自Rb、Cs、Fr、及其组合的IA族金属，B为选自Si、Ge、Sn、Pb、及其组合的IVA族金属，X为选自F、Cl、Br、和I的卤素、BF4‑、或其组合，和α大于0且小于或等于约3；和其中所述量子点具有约1纳米‑约50纳米的尺寸。化学式1ABX3+α。
摘要（英）：

The invention relates to quantum dots, production methods thereof, and electronic devices including the same. A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1, wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF 4 , or a combination thereof, and is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers. The Chemical Formula 1 ABX3+ [alpha].

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