A preparation method of wear-proof tungsten disulfide film comprises the following steps that (1) pretreatment is conducted on a monocrystalline silicon piece, the surface of the monocrystalline silicon piece is made clean, the roughness of the surface of the monocrystalline silicon piece is made not higher than Ra 0.1, a graphite target, a WS2 target and the pretreated monocrystalline silicon piece are fed in a multi-target magnetron sputtering deposition chamber, after the air pressure in the deposition chamber is made to be 1.0*10<-3> Pa, through pumping, the target-substrate distance is adjusted to be appropriate, and pulse direct-current negative bias voltage is applied to a base material; (2) high-purity argon is fed to be used as work gas, and amorphous-state carbon film with the deposition thickness being 20-400 nm is deposited on the surface of the monocrystalline silicon piece with the graphite target as a sputtering target material; (3) the temperature of the amorphous-state carbon film obtained in the step (2) is adjusted to 200 DEG C, WS2 film is deposited on the amorphous-state carbon film with the deposit thickness being 140-740 nm with the WS2 target as a sputtering target material, and then the tungsten disulfide film is obtained. The preparation method is simple in technology, good in economical efficiency, capable of greatly improving the mechanical performance of the tungsten disulfide film and the wear-proof performance of the tungsten disulfide film in vacuum or in a humid environment.