The invention relates to a novel crucible capable of reducing inclusions in silicon carbide single crystals and a method for growing single crystals by using the crucible. The novel crucible comprises an outer crucible and a crucible cover, wherein an inner crucible is arranged in the outer crucible; the inner crucible comprises a bottom and a side wall; the side wall is a double-layer side wall; the double-layer side wall comprises an inner wall and an outer wall; small holes penetrating through the inner wall are formed in the inner wall; an annular end cover for sealing an interlayer between the inner wall and the outer wall is arranged at the upper end opening of the double-layer side wall. The inner crucible of the crucible closes SiC powder, which is located at a high temperature position and is easy to carbonize, in the interlayer between the inner wall and the outer wall of the inner crucible, so that powdered carbonized tiny carbon particles cannot be transported to the surfaces of seed crystals; meanwhile, powder in an inner cavity achieves a filter effect on a pyrolytic gas phase in the interlayer, so that the carbon particles are prevented from being transmitted to the surfaces of the SiC single crystals; therefore, carbon inclusions in the SiC single crystals are greatly reduced, and even in the SiC single crystals with the thickness of 20 mm, still no carbon inclusions are generated.