利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN107075666A 溅射靶用母合金和溅射靶的制造方法 无效 - 驳回

溅射靶用母合金和溅射靶的制造方法
摘要：
本发明提供一种溅射靶用母合金，其为用于溅射靶的母合金，其特征在于，将构成母合金的元素设为以下的X1、X2、Y1、Y2、Y3时，X1：Ta或W中的一种或两种，X2：Ru、Mo、Nb或Hf中的一种以上，Y1：Cr或Mn中的一种或两种，Y2：Co或Ni中的一种或两种，Y3：Ti或V中的一种或两种，所述母合金包含上述构成元素的X1‑Y1、X1‑Y2、X1‑Y3、X2‑Y1、X2‑Y2中的任一种组合。由此具有下述优良效果：能够得到缺陷少、高密度且均匀的合金组成的靶，并且通过使用该靶，可以提供能够以高速进行均质且粉粒少的合金阻挡膜的成膜的烧结体溅射靶。
摘要（英）：

The invention discloses a master alloy for sputtering a target and a method for manufacturing a sputtering target. Provided is a master alloy for a sputtering target, such master alloy being characterized in that, if the elements constituting the master alloy are X1, X2, Y1, Y2, and Y3 as defined hereinafter, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the abovementioned constituent elements, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb, or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V. Because of this configuration, the master alloy exhibits the outstanding effects that a target with few defects, high density, and a uniform alloy composition can be obtained and, through the use of this target, a sintered sputtering target can be provided with which it is possible to form at high speed an alloy barrier film with uniform quality and few particles.

0/0