The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4,R5, and R6 are independent of each other hydrogen,an alkyl group,or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.