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CN107109695A 碳化硅基板和碳化硅基板的制造方法 无效 - 撤回

碳化硅基板和碳化硅基板的制造方法
摘要：
一种碳化硅单晶基板(11)，其具有相对于{0001}面有偏角的第一主面(11a)和与所述第一主面(11a)连续地设置的第一周缘端部(11c2)。在所述第一主面(11a)上形成碳化硅外延层(12)。所述碳化硅外延层(12)具有与所述第一主面(11a)接触的第二主面(12b)、在所述第二主面(12b)相反侧的第三主面(12a2)、及与所述第二主面(12b)和所述第三主面(12a2)各自连续地设置的第二周缘端部(12c2)。将包括所述第一周缘端部(11c2)和所述第二周缘端部(12c2)的周缘区域(C)除去。所述碳化硅外延层(12)在垂直于所述第三主面(12a2)的方向上具有50μm以上的厚度。
摘要（英）：

A silicon carbide single crystal substrate (11) including a first major surface (11a) that is off-axis from a {0001} plane and a first peripheral edge part (11c2) provided continuous with the first major surface (11a) is prepared. A silicon carbide epitaxial layer (12) is formed on the first major surface (11a). The silicon carbide epitaxial layer (12) includes a second major surface (12b) in contact with the first major surface (11a), a third major surface (12a2) on the opposite side from the second major surface (12b), and a second peripheral edge part (12c2) provided continuous with each of the second major surface (12b) and the third major surface (12a2). A peripheral region (C) that includes the first peripheral edge part (11c2) and second peripheral edge part (12c2) is removed. The thickness of the silicon carbide epitaxial layer (12) in a direction that is perpendicular to the third major surface (12a2) is 50 (mu)m or more.

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