The present invention provides an organic insulating layer-based gradient-doped IGZO thin-film transistor and relates to the technical field of electronics. The organic insulating layer-based gradient-doped IGZO thin-film transistor comprises a substrate, a gate electrode, an organic insulating layer and a gradient-doped IGZO semiconductor layer, wherein the substrate, the gate electrode, the organic insulating layer and the gradient-doped IGZO semiconductor layer are sequentially arranged from bottom to top. On the gradient-doped IGZO semiconductor layer, a source electrode and a drain electrode are arranged in parallel. The gradient-doped IGZO semiconductor layer comprises a lowermost IGZO thin-film layer, an uppermost IGZO thin-film layer, and an intermediate IGZO thin-film layer, wherein the concentrations of the lowermost IGZO thin-film layer, the uppermost IGZO thin-film layer, and the intermediate IGZO thin-film layer are sequentially increased. According to the technical scheme of the invention, the problem that the IGZO semiconductor and the organic insulating layer are not matched in lattice so as to cause the damage of the subsequent DC magnetron sputtering to the organic insulating layer and the formation of a large leakage current can be solved.