利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN107134438B 半导体器件和在半导体管芯周围形成绝缘层的方法 有权

半导体器件和在半导体管芯周围形成绝缘层的方法
摘要：
本发明涉及半导体器件和在半导体管芯周围形成绝缘层的方法。一种半导体器件具有半导体晶片，该半导体晶片包括在该半导体晶片的第一表面上方形成的多个接触焊盘和多个半导体管芯。部分地穿过半导体晶片的第一表面形成沟槽。将绝缘材料设置在半导体晶片的第一表面上方和到沟槽中。在接触焊盘上方形成导电层。该导电层可以被印刷成在相邻的接触焊盘之间的沟槽中的绝缘材料上方延伸。将半导体晶片的与半导体晶片的第一表面相对的一部分移除，到沟槽中的绝缘材料。在半导体晶片的第二表面和半导体晶片的侧表面上方形成绝缘层。穿过第一沟槽中的绝缘材料而单体化半导体晶片，以分离半导体管芯。
摘要（英）：

A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

公开/授权文献
0/0