The invention discloses a semiconductor device considering photo-thermal coordinated management. A micro-nano structural layer is arranged on the light output surface or a light input surface of the semiconductor device; the micro-nano structural layer is formed by one or more kinds of micro-nano structures in arrangement and accumulation; the maximum width at one end, close to the light output surface or the light input surface of the semiconductor device, of each micro-nano structure is 1-3[mu]m, and the maximum width is gradually reduced in the height direction. By virtue of the device, the transmission capability of visible light (380-780nm) and solar spectrum main energy wave band (less than 2[mu]m) light can be improved, and the thermal radiation capability of the device in the infrared waveband of 8-13[mu]m can be improved.