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发明公开
CN107221353A 采用横向双极结型晶体管的反熔丝非易失性存储器件 有权

采用横向双极结型晶体管的反熔丝非易失性存储器件
摘要：
一种反熔丝非易失性存储器件包括反熔丝存储单元和双极结型晶体管。反熔丝存储单元具有第一端子和第二端子。第二端子耦接到字线。双极结型晶体管具有耦接到反熔丝存储单元的第一端子的集电极端子、基极端子以及耦接到位线的发射极端子。
摘要（英）：

An anti-fuse nonvolatile memory device includes an anti-fuse memory cell and a bipolar junction transistor. The anti-fuse, memory cell has a first terminal and a second terminal. The second terminal is coupled to a word line. The bipolar junction transistor has a collector terminal coupled to the first terminal of the anti-fuse, memory cell, a base terminal, and an emitter terminal coupled to a bit line.

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