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发明公开
CN107278346A 芯片级功率可调紫外光源 有权

芯片级功率可调紫外光源
摘要：
一种芯片级紫外线激光源，包括位于衬底上的多个激光器元件，每个激光器元件包括：后腔镜、锥形增益介质、外耦合器、非线性晶体，其在前端面耦合到所述外耦合器，其中所述前端面具有第一涂层，所述第一涂层对所述激光器元件的基本波长具有抗反射性(AR)，并且对紫外线波长具有高反射性(HR)，并且其中所述非线性晶体的出射面具有第二涂层，所述第二涂层对所述激光器元件的基本波长具有高反射性(HR)，对紫外线波长具有抗反射性(AR)；耦合至所述外耦合器的光电探测器；耦合至所述光电探测器并耦合至所述后腔镜的调相器；和所述衬底上的主激光二极管，其耦合至每个激光器元件的所述调相器。每个激光器元件发射紫外线波束并且频率和相位锁定至所述主激光二极管。
摘要（英）：

A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.

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