A resistive memory overcomes the low durability of the conventional resistive memory. The resistive memory includes two electrodes, an enclosing layer and an oxygen-containing resistance changing layer. The two electrodes are separate from each other. The enclosing layer is provided with a channel. The oxygen-containing resistance changing layer isolates the channel of the enclosing layer. The two electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the two electrodes and the enclosing layer is made of an element not containing oxygen. Thus, the above problems can be solved.