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发明授权
CN107367904B 极紫外光的光刻光罩 失效 - 权利终止 转让

极紫外光的光刻光罩
摘要：
本揭示内容涉及极紫外光的光刻光罩，其有关于半导体结构，且更特别的是，有关于极紫外光的光刻光罩的修饰表面及制造方法。该结构包括具有图案化设计的反射表面，以及在该图案化设计的边缘的黑色边界区。该黑色边界区包括修饰表面形态以引导光线远离而不抵达后续反射体。
摘要（英）：

The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.

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