The invention provides a superjunction metal-oxide-semiconductor field effect transistor (MOSFET) device with a protection ring, and belongs to the technical field of a power device. A combination unit is arranged in an active region of the superjunction MOSFET device and comprises at least one cell array and the protection ring, the periphery of the cell array is encircled by the protection ring, the arbitrary cell structure comprises a metal drain, a substrate, an epitaxial region, a column region, a first body region, a grid and a metal source from bottom to top, a ring region and a second body region are also arranged in the epitaxial region at the periphery of the cell array, the second body region is arranged in the ring region, and the conductive types of the first body region, the second body region, the column region and the ring region are opposite to the conductive type of the epitaxial region. By reasonably controlling doping quantity of the ring region relative to the column region to cause charge unbalance at the protection ring, an avalanche breakdown path is changed and is fixed at the protection ring, an avalanche current is prevented from passing a parasitic triode base resistor to make the parasitic triode base resistor opened, so that UIS failure resistant capability of the superjunction device is improved, and the reliability of the superjunction power device is further improved.