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发明公开
CN107431001A 半导体元件及其制造方法 有权

半导体元件及其制造方法
摘要：
本发明的半导体元件(1)在表面背面导通型基板(2)的表面侧电极(3a)以及背面侧电极(3b)上形成有非电解镍磷镀层(4)以及非电解镀金层(5)。表面侧电极(3a)以及背面侧电极(3b)包括铝或者铝合金。另外，形成于表面侧电极(3a)上的非电解镍磷镀层(4)的厚度相对于形成于背面侧电极(3b)上的非电解镍磷镀层(4)的厚度的比例是1.0以上且3.5以下。本发明的半导体元件(1)在通过钎焊安装时能够防止在焊料内部产生空孔。
摘要（英）：

In a semiconductor element 1 according to the present invention, an electroless nickel-phosphorus plated layer 4 and an electroless gold plated layer 5 are formed on a front-side electrode 3a and a rear-side electrode 3b of a both-sides conductive substrate 2. The front-side electrode 3a and the rear-side electrode 3b are formed from aluminum or aluminum alloy. The electroless nickel-phosphorus plated layer 4 formed on the front-side electrode 3a has a thickness ratio of not smaller than 1.0 and not greater than 3.5 to the thickness of the electroless nickel-phosphorus plated layer 4 formed on the rear-side electrode 3b. The semiconductor element 1 according to the present invention can prevent the development of holes in solder when mounted by soldering.

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