The invention relates to a method of producing a graphene-based material, namely a direct sonication assisted method for producing a graphene-based material, in particular comprising 2D porous graphene includes subjecting a mixture of at least one carbide compound and at least one etching compound to sonication. This method enables the production of large amounts of a graphene-based material in a short time at ambient temperature and pressure and without the need for toxic reactants. The obtained porous graphene-based material has excellent electrical conductivity, due to the direct chemical synthesis, and is free of any template and not attached to any substrate. The 2D porous graphene can be directly used without transfer processes. The invention further relates to the graphene-based material obtained or obtainable by the method and the use of the graphene-based material.