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发明公开
CN107482070A 一种凹槽型电极结构的InGaN基MSM可见光光电探测器 有权

一种凹槽型电极结构的InGaN基MSM可见光光电探测器
摘要：
本发明公开了一种凹槽型电极结构的InGaN基MSM可见光光电探测器。器件结构包括衬底（10）及生长于衬底（10）之上的外延层，其中，外延层自下而上的顺序依次为缓冲层（11），过渡层（12），非故意掺杂InxGa1-xN有源层（13），在InxGa1-xN有源层（13）上镀制的肖特基金属-半导体-金属（MSM）器件结构的插指状电极（14）和插指状电极（15），其中电极（14）沉积在原生InxGa1-xN（13）的表面，电极（15）沉积在插指状凹槽（16）中。凹槽（16）采用干法或湿法刻蚀在有源层（13）上形成。与传统平面MSM结构相比，具有凹槽型电极结构的 InGaN基 MSM可见光探测器利用凹槽侧壁阻断载流子因InGaN原表面变程跃迁所产生的漏电流，可显著降低探测器的暗电流；同时，凹槽电极改善了电极间的电场分布，可有效提升光电流。
摘要（英）：

The invention discloses an InGaN-based MSM visible light photoelectric detector with a groove-type electrode structure. The device structure comprises a substrate (10) and an epitaxial layer growing on the substrate (10), wherein the epitaxial layer includes, sequentially from bottom to top, a buffer layer (11), a transition layer (12), an unintentional doping InxGa1-xN active layer (13), and an inserting-finger-shaped electrode (14) and an inserting-finger-shaped electrode (15), which have a schottky metal-semiconductor-metal (MSM) device structure and are coated on an InxGa1-xN active layer (13), wherein the electrode (14) is deposited on the surface of a primordial InxGa1-xN(13), and the electrode (15) is deposited in an inserting-finger-shaped groove (16). The groove (16) is formed on the active layer (13) through etching by a dry method or wet method. Compared with a conventional planar MSM structure, An InGaN-based MSM visible light photoelectric detector with a groove-type electrode structure uses groove sidewall to block leakage current of carriers due to range transition of InGaN original surface, thereby substantially reducing the dark current of the detector. The groove electrode improves the field distribution between electrodes, thereby effectively improving photoelectric current.

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