The invention discloses a production method for a centre support quasi-suspension type MEMS (Micro Electro Mechanical System). A silicon dioxide protection layer is formed on the surface of a silicon structure of a chip through adoption of a high temperature oxidation method, and the silicon dioxide protection layer at the bottom of the chip is patterned, thereby forming an etching mask. Through adoption of an anisotropic etching technology, a center support structure with a relatively large area and a plurality of auxiliary support structures with relatively small areas are etched on the substrate of an MEMS chip. The MEMS chip is fixed in a ceramic tube shell cavity through adhesion or bonding, thereby carrying out metal lead bonding. A ceramic tube shell comprising the MEMS chip is integrally placed into an etching cavity. Etching is carried out through anisotropic etching gas, so the auxiliary support structures are completely etched and removed, and part of the center support structure is reserved and is not etched and removed. The center support structure is processed on the silicon substrate and the MEMS chip is supported in a packaging pipe shell approximate to suspension, so the packaging stress on the MEMS chip is greatly reduced, and the MEMS chip is packaged under low stress. The method has the advantages that a packaging technology is simple, the packaging cost is not increased clearly, and the realization is easy.