The invention provides a sensor manufacturing method including a gas sensitive and humidity sensitive device forming step. The gas sensitive and humidity sensitive device forming step includes a device region forming step and a device composition step. The device region forming step includes a humidity sensitive device region forming step and a gas sensitive device region forming step. The devicecomposition step includes a humidity sensitive device forming step and a gas sensitive device forming step. The invention also provides a sensor that is manufactured using the above-described sensor manufacturing method. In the invention, a humidity sensitive capacitor and a gas sensitive resistor are manufactured on the same silicon chip by a completely compatible process, and no special processis required, so that the structure is simple and reliable. A self-aligning process is used for the injection and formation of a gas sensitive material so that the gas-sensitive graphics are stable andconsistent in size. The beneficial effects that the gas sensitive material is processed simply at a low temperature below 400 DEG C and is compatible with the conventional semiconductor aluminum wiring process, no expensive metals such as gold are needed, and the cost is reduced are gained.