利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN107623061A 一种抑制薄膜LED芯片光反射金属层球聚的方法 无效 - 撤回

一种抑制薄膜LED芯片光反射金属层球聚的方法
摘要：
本发明公开了一种抑制薄膜LED芯片光反射金属层球聚的方法，包括以下步骤：外延材料清洗、生长绝缘介质层、光刻P面电极孔、蒸发P面电极、光刻P面电极、蒸发光反射金属层、蒸发键合金属层、晶片键合、蒸发N面电极、光刻N面电极、电极合金、芯片粗化、芯片测试、芯片切割、芯片分选、产品包装入库，特征是：在光刻N面电极步骤和芯片粗化步骤之间设有电极合金步骤，且放在晶片键合步骤之后。本发明将P面电极合金跟N面电极合金合并为一个电极合金工艺，且放在晶片键合之后，光反射金属层两侧的压力能够有效抑制光反射金属层在电极合金的高温作用下发生球聚现象，提高了光反射金属层的光反射率，同时简化了薄膜LED芯片的制备工序。
摘要（英）：

The invention discloses a method for inhibiting ball clustering on the light reflecting metal layer of a film LED chip, which includes the following steps: cleaning an epitaxial material; growing an insulating dielectric layer; photo-etching a P-side electrode hole; evaporating a P-side electrode; photo-etching the P-side electrode; evaporating a light reflecting metal layer; evaporating a bondingmetal layer; wafer bonding; evaporating an N-side electrode; photo-etching the N-side electrode; electrode alloying; chip coarsening; chip testing; chip cutting; chip sorting; and product packaging and storing. The method is characterized in that the step of electrode alloying is implemented between the step of photo-etching the N-side electrode and the step of chip coarsening and after the stepof wafer bonding. The P-side electrode alloying and the N-side electrode alloying are combined into one electrode alloying process, and the electrode alloying process is implemented after wafer bonding. The pressure on both sides of the light reflecting metal layer can inhibit the phenomenon of ball clustering on the light reflecting metal layer under the high temperature effect of electrode alloy. The light reflectance of the light reflecting metal layer is improved. The preparation procedure of the film LED chip is simplified.

0/0