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发明公开
CN107655833A 一种低导热率非导体材料高温半球发射率测量方法与系统 有权

一种低导热率非导体材料高温半球发射率测量方法与系统
摘要：
本发明涉及一种低导热率非导体材料高温半球发射率测量方法与系统。该方法利用材料常温、高温、法向、半球发射率的关系，通过测量常温半球发射率、常温法向发射率及高温法向发射率，导出材料高温半球发射率。测量系统包括常温半球发射率测量装置、常温法向发射率测量装置及高温法向发射率测量装置。本发明通过间接测量的方式，得出高温半球发射率，实现了低导热率非导体材料高温半球发射率测量途径，测量过程科学，结果准确可靠。
摘要（英）：

The invention relates to a method and a system for measuring the high-temperature hemispherical emissivity of a low thermal conductivity nonconductor material. The method allows the high-temperature hemispherical emissivity of the material to be deduced by measuring the normal-temperature hemispherical emissivity, the normal-temperature normal emissivity and the high-temperature normal emissivitythrough using the relationship among the normal-temperature emissivity, the high-temperature emissivity, the normal emissivity and the hemispherical emissivity of the material. The measuring system comprises a normal-temperature hemispherical emissivity measuring device, a normal-temperature normal emissivity measuring device and a high-temperature normal emissivity measuring device. The normal-temperature hemispherical emissivity is obtained in an indirect measuring manner, so the measurement of the high-temperature hemispherical emissivity of the low thermal conductivity nonconductor material is realized, the measurement process is scientific, and the result is accurate and reliable.

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