The invention relates to a finite element modeling method for simulating a failure short-circuit mechanism of a pressing connection type IGBT device and belongs to the field of large-power semiconductor device failure mechanisms and reliability research. The modeling method comprises the steps that a pressing connection type IGBT failure short-circuit process is simulated, a pressing connection type IGBT device equivalent model of a penetrating pit which is formed by a failure short circuit is built, and the content of aluminum element in the penetrating pit is set, so that the material attribute change of different failure short-circuit processes is formed; the pressing connection type IGBT device is subjected to modeling in a multi-physics field, a pressing connection type IGBT device geometric model is built, and based on the material attribute change of different failure short-circuit processes, the change rules of resistance and thermal resistance in different failure short-circuit processes are subjected to circulating simulation and analog. According to the finite element modeling method, finite element modeling and analysis in the failure short-circuit process of the pressing connection type IGBT device are achieved, a failure short-circuit equivalent model of the penetrating pit is considered, the change of characteristic parameters in the failure short-circuit processof the pressing connection type IGBT device is simulated, and the basis can be provided for failure short-circuit state monitoring of the pressing connection type IGBT device.