The invention discloses a memristor having a neural bionic function. The structure of the memristor comprises a substrate, an Ag bottom electrode layer formed on the substrate, a functional layer formed on the Ag bottom electrode layer and an Ag top electrode layer formed on the functional layer, wherein the substrate, the Ag bottom electrode layer, the functional layer and the Ag top electrode layer are arranged from the bottom to the top in turn. The functional layer comprises a first zirconium hafnium oxide film layer, a graphene oxide quantum dot intermediate layer and a second zirconium hafnium oxide film layer which are arranged from the bottom to the top in turn. Meanwhile, the invention also discloses a preparation method and application of the memristor. The finally prepared memristor is enabled to have great neural bionic effect through the design of the specific structure, especially the graphene oxide quantum dot intermediate layer is arranged between the first zirconium hafnium oxide film layer and the second zirconium hafnium oxide film layer in the functional layer so that growth and fracture of the conductive filament can be accurately controlled to enhance the uniformity of the device, and the device is enabled to have the more stable resistance change, lower power consumption and better stability and uniformity in comparison with the similar devices.