The invention discloses a misreading-resistant resistive random access memory. The structure of the misreading-resistant resistive random access memory comprises a substrate, a resistive random dielectric layer which is formed on the substrate and an Ag electrode layer which is formed on the resistive random dielectric layer, wherein the substrate, the resistive random dielectric layer and the Agelectrode layer are arranged from the bottom to the top in turn. The resistive random dielectric layer comprises a first zirconium hafnium oxide film layer, a graphene oxide quantum dot intermediate layer and a second zirconium hafnium oxide film layer which are arranged from the bottom to the top in turn. The invention also discloses a preparation method of the resistive random access memory. Theresistive random access memory of the specific structure is prepared, especially graphene oxide quantum dot intermediate layer is embedded between the first zirconium hafnium oxide film layer and thesecond zirconium hafnium oxide film layer of the resistive random material layer and growth and fracture of the conductive filament can be accurately controlled to enhance the uniformity of the device so that the finally prepared resistive random access memory is enabled to have the more stable resistance change, lower power consumption and better stability and uniformity, and the preparation method is simple, great in operability and simple in large-scale production and manufacturing and thus the application prospect is wide.