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发明公开
CN107731782A 半导体结构 无效 - 撤回

半导体结构
摘要：
本发明公开一种半导体结构。半导体结构包括：基底；第一钝化层，设置于所述基底上；导电垫，设置于所述第一钝化层上；第二钝化层，设置于所述第一钝化层上；导电结构，设置于所述导电垫上；被动元件，设置于所述导电垫上，其中所述被动元件具有位于所述第二钝化层上的第一部分以及穿过所述第二钝化层的第二部分；可焊性保护膜，覆盖所述被动元件的所述第一部分；第一凸块下金属层，覆盖所述被动元件的所述第二部分；以及第二凸块下金属层，覆盖所述导电结构的一部分；其中，所述第一凸块下金属层与所述有机可焊性保护膜一起将所述被动元件包围起来；其中，所述第一凸块下金属层延伸至所述第二钝化层的上表面，并且所述有机可焊性保护膜不与所述第二钝化层相接触。本发明所公开的半导体结构，有机可焊性保护膜可以防止表面效应的发生，此外，能够减小电阻并具有较高的品质因数。
摘要（英）：

The invention provides a semiconductor structure. The semiconductor structure includes a substrate; a first passivation layer disposed on the substrate; a conductive pad disposed on the first passivation layer; a second passivation layer disposed on the first passivation layer; a conduction structure arranged on the conductive pad; a passive device disposed on the conductive pad, wherein the passive device has a first portion located on the second passivation layer and a second portion passing through the second passivation layer; a weldability protection film coating the first portion of thepassive element; a first lug lower metal layer coating the second portion of the passive portion; and a second lug lower metal layer coating one portion of the conduction structure, wherein the firstlug lower metal layer and the weldability protection film encircle the passive element, the first lug lower metal layer extends to the upper surface of the second passivation layer, and the weldability protection film is not in contact with the second passivation layer. The semiconductor structure is provided with the eldability protection film to avoid generation of a surface effect. Besides, theresistance can be reduced and there is a high quality factor.

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