The invention belongs to the field of electronic technologies, and particularly provides a longitudinal-BJT-triggered SCR device used for ESD protection. The longitudinal-BJT-triggered SCR device (VBTSCR) introduces an extra triggering path on the basis of a traditional LSCR device. An ESD injection layer is introduced into a first conduction type well region, so as to form a longitudinal-structure base region floating NPN transistor. The ESD injection layer is a P-type doped region with a medium doping concentration, and the doping concentration thereof is between a drain/source heavily-dopedactive region concentration and a well region doping concentration. According to the SCR device, a common-emitter collector junction avalanche breakdown voltage BV of the longitudinal-structurebase region floating NPN transistor is very low, when the base region floating NPN transistor serves as a triggering device of the SCR, significant reduction of the triggering voltage of the SCR device can be realized, thereby realizing the effect of providing effective ESD protection for circuits in an advanced nanometer technology.