Provided in the present invention are a hybrid complementary metal–oxide–semiconductor (CMOS) device and a manufacturing method therefor. The method for manufacturing a hybrid CMOS device of the present invention comprises: preparing an active layer of a P-type metal-oxide-semiconductor (PMOS) transistor by using low temperature polycrystalline silicon, while simultaneously preparing an active layer of an N-type metal-oxide-semiconductor (NMOS) transistor by using a metal oxide semiconductor, and using the two semiconductor materials in combination to form a hybrid CMOS device; compared with existing methods for preparing an active layer of a PMOS transistor by using a two-dimensional carbon nano-tube material or an organic semiconductor material, the hybrid CMOS device prepared by the present invention has better electrical performance. In addition, a first active layer is hydrogenated during the manufacturing process so as to improve the electrical performance of the first active layer, and hydrogen pollution in a second active layer is removed during subsequent processing by using a method of quick thermal annealing so as to guarantee that the second active layer has good electrical performance.