An ultra wide band micro-strip vertical transition based on a single layer microwave medium is based on the single layer medium substrate; an upper metal layer and a lower metal layer are employed; each layer comprises a 50 ohm microstrip line, a non-linear transition coupling line, a ground plane, rectangular area branches, and a metallization grounding hole; the 50 ohm microstrip line transits to the ground plane through the non-linear transition coupling line; the rectangular area branches extend out from the ground plane, located on two sides of the non-linear transition coupling line, andprovided with the metallization grounding hole so as to connected with the other layer of rectangular area branch or the ground plane. The vertical transition based on the single layer microwave medium substrate employs the method by which the microstrip quasi-TEM mode transits to the microstrip coupling structure and transits to the quasi-TEM mode; the upper and lower microstrip structures are symmetrically arranged with respect to the center; the process is easy to realize; the vertical transition is high in usage frequency, can be applied to the Ka frequency range and the millimeter wave frequency range, is wide in work bandwidth, and the relative bandwidth approaches to the 1.5 times of octave.