The invention provides an insulated gate bipolar transistor (IGBT) test circuit and method. According to the circuit, a first switch and a first power source are connected in series to form a first series circuit; a capacitor and the first series circuit are connected in parallel to form a parallel circuit; a IGBT to be tested, a current harvester and a protection element are connected in series to form a second series circuit; the second series circuit is connected in parallel with a series circuit through a second switch, wherein the series circuit is composed of the parallel circuit and aninductor; a first current source and a second current source are connected in parallel with the second series circuit; a voltage detection unit is connected in parallel with the collector and emitterof the IGBT to be tested; and a control unit is connected with the gate of the IGBT to be tested. According to the insulated gate bipolar transistor (IGBT) test circuit and method, a circuit composedof the first power source, the first switch, the second switch, the inductor, and the capacitor is adopted to simulate short-circuit current during a fault; the IGBT to be tested is disconnected whencollector and emitter current collected by the current harvester reaches a preset value of the short-circuit current; Rce testing and Vce testing are performed; the operating condition of the IGBT ofa direct-current circuit breaker can be simulated more accurately, and a test result is closer to an actual fault condition; and test accuracy can be improved.