The invention provides a circuit-level noise model of a graphene field-effect transistor and a modeling method of the circuit-level noise model. The noise model comprises the following components: 1,a channel thermal noise current source model which is represented by an equation described in the descriptions of the invention; 2, correlated portions between an induced gate noise current source model and the channel thermal noise current source model as well as between an induced gate noise current source and the channel thermal noise current source model; 3, a thermal resistance noise currentsource model which is represented by an equation described in the descriptions of the invention; and 4, four noise parameters Rn, Bopt, Gopt and NFmin of the graphene field-effect transistor, whereinthe Rn, Bopt, Gopt and NFmin are represented by corresponding equations in the descriptions of the invention.