The invention relates to the technical field of polaroids, especially a real quantum dot polaroid. The polaroid comprises a polaroid base layer, and the upper and lower sides of the polaroid base layer are respectively provided with a first protection layer and a second protection layer. Quantum dot layers are respectively disposed between the polaroid base layer and the first protection layer, and between the polaroid base layer and the second protection layer. The above layers are adhered through adhesive, and are molded through a hot-press method. The quantum dot layers are color film layers, and the interiors of the quantum dot layers are provided with semiconductor materials. A third protection layer and a fourth protection layer are disposed between the quantum dot layers and the polaroid base layer. The quantum dot polaroid is good in polarity, is appropriate in thickness, and is low in production cost. Water and oxygen blocking layers are respectively disposed among the first protection layer, the second protection layer and the quantum dot layers. The quantum dot polaroid can improve the water resistance and aging resistance. One side of the polaroid base layer is also provided with a microstructure groove which improves the light efficiency, and the structure can further improve the polarity of the quantum dot polaroid.