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发明公开
CN107958953A 磁性隧道结的自由层的制备方法及磁性隧道结的制备方法 有权 转让

磁性隧道结的自由层的制备方法及磁性隧道结的制备方法
摘要：
本发明提供了一种磁性隧道结的自由层的制备方法及磁性隧道结的制备方法。该磁性隧道结的自由层的制备方法包括采用沉积工艺设置自由层的各膜层，采用第一等离子体处理各膜层中的一层或多层，以及对第一等离子体处理后的各膜层中的一层或多层进行第一退火处理。利用第一退火处理对第一等离子体处理之后的一层或多层膜层进行原位热处理，进而减少或者消除第一等离子体处理可能造成的损伤或缺陷，改善自由层的表面特性，进而提高具有该自由层的磁性隧道结的综合性能，比如提高磁性隧道结的TMR值，降低其RA值。
摘要（英）：

The invention provides a method for preparing a free layer of a magnetic tunnel junction and a method for preparing a magnetic tunnel junction. The method for preparing a free layer of a magnetic tunnel junction includes the steps of setting the films of a free layer through a deposition process, carrying out first plasma treatment on one or more of the films, and carrying out first annealing treatment on the one or more of the films after the first plasma treatment. As in-situ heat treatment is carried out on the one or more films after the first plasma treatment through the first annealing treatment, possible damage or defects caused by the first plasma treatment can be reduced or eliminated, and the surface characteristic of the free layer can be improved. Therefore, the comprehensive performance of a magnetic tunnel junction comprising the free layer can be improved, for example, the TMR value of the magnetic tunnel junction can be improved, and the RA value can be reduced.

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