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发明授权
CN108070844B 原子层沉积设备及其抽气速率控制方法 有权

原子层沉积设备及其抽气速率控制方法
摘要：
本发明揭露一种用于一原子层沉积设备的抽气速率控制方法及使用此方法的原子层沉积设备。该原子层沉积设备包含反应室、供气装置、抽气装置及并联管路，该供气装置连接至该反应室以选择性提供该反应室至少二反应气体及至少一清泄气体，该抽气装置连接至该反应室以对该反应室抽气，该并联管路连接该供气装置及该抽气装置并包含并联控制阀门，该供气装置经由该并联管路提供该抽气装置不与该反应气体反应的负载气体。通过控制该并联控制阀门的开、闭，可改变该抽气装置的抽气负载，进而达到改变该抽气装置对该反应室的抽气速率的目的。
摘要（英）：

The present invention discloses a pumping speed control method for an atomic layer deposition apparatus and an atomic layer deposition apparatus using the method. The atomic layer deposition apparatusincludes a reaction chamber, an air supply device, a pumping device, and a parallel pipeline. The air supply device is connected to the reaction chamber to selectively provide at least two reaction gases and at least one purge gas for the reaction chamber. The pumping device is connected to the reaction chamber to pump the reaction chamber. The parallel pipeline is connected to the air supply device and the pumping device and includes a parallel control valve. The air supply device provides a load gas which does not react with the reactant gas for the pumping device through the parallel pipeline. By controlling the opening and closing of the parallel control valve, the pumping load of the pumping device can be changed, and a purpose of changing the pumping speed of the pumping device to the reaction chamber can be achieved.

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