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发明公开
CN108091491A 降低非固体电解质钽电容漏电流值的方法以及制备非固体电解质钽电容的方法 无效 - 驳回

降低非固体电解质钽电容漏电流值的方法以及制备非固体电解质钽电容的方法
摘要：
本发明涉及于非固体电解质钽电容器制造技术领域，具体而言，涉及一种降低非固体电解质钽电容漏电流值的方法以及制备非固体电解质钽电容的方法。降低非固体电解质钽电容漏电流值的方法，包括以下步骤：依次进行自然浸润和分次施加电流，第一施加电流为升压总电流的5-15％，第二次施加电流是以5-30分钟施加升压总电流的10-20％的速率施加电流。该方法能够有效的降低了非固体电解质钽电容器形成后漏电流值，提高了产品的可靠性。
摘要（英）：

The invention relates to the technical field of non-solid electrolyte tantalum capacitor manufacturing and particularly relates to a method for reducing a leakage current value of a non-solid electrolyte tantalum capacitor and a method for preparing the non-solid electrolyte tantalum capacitor. The method for reducing a leakage current value of a non-solid electrolyte tantalum capacitor comprisesthe steps of carrying out natural infiltration and sequential application of current in sequence, wherein first application of current is 5% to 15 % of boost total current, and second application of current is the application of current with a rate of the application of 10% to 20% of the boost total current in 5 to 30 minutes. According to the method, the leakage current value after forming the non-solid electrolyte tantalum capacitor can be effectively reduced, and the reliability of a product is improved.

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