The invention discloses a uniform de-layering method for an aluminum process chip. The method comprises: acquiring layer thickness information, including the thickness of a metal wiring layer, the thickness of a dielectric via hole layer and the thickness of the barrier layer, of a chip; according to the layer thickness information and an etching rate, determining first etching time and etching afirst barrier layer being one barrier layer arranged at the outer surface side of the metal wiring layer in preset etching gas; removing the metal wiring layer by using rubber; and etching a second barrier layer being one barrier layer arranged at the inner surface side of the metal wiring layer in etching gas. According to the method disclosed by the invention, the rubber is used as a tool for removing the metal wiring layer and the aluminum can be etched selectively, so that a via hole phenomenon and an edge effect are avoided.