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发明公开
CN108091755A TiCoSb基高熵热电材料及其制备方法与热电器件 无效 - 驳回

TiCoSb基高熵热电材料及其制备方法与热电器件
摘要：
本发明公开了一种TiCoSb基高熵热电材料及其制备方法和应用。本发明TiCoSb基高熵热电材料，其化学式为Ti1-xMxCo1-yNiySb1-zSnz；x＝0.2～0.8，y＝0～0.2，z＝0～0.3，所述M包括V、Nb、Hf、Zr、Sc、Y、Ta、Mo元素中任意4-5种元素。其制备方法包括按照TiCoSb基高熵热电材料所含元素的化学计量比称取各纯金属原料，并进行熔炼处理和退火处理及放电等离子体烧结步骤。本发明TiCoSb基高熵热电材料具有低的晶格热导率。所述TiCoSb基高熵热电材料的制备方法工艺条件易控，保证了制备的TiCoSb基高熵热电材料微观形貌和物化性能稳定，而且制备的效率高，降低了生产成本。
摘要（英）：

The invention discloses a TiCoSb-based high-entropy thermoelectric material, a preparation method thereof and application. The chemical formula of the TiCoSb-based high-entropy thermoelectric materialof the present invention is Ti1-xMxCo1-yNiySb1-zSnz, wherein x ranges from 0.2 to 0.8, y ranges from 0 to 0.2, and z ranges from 0 to 0.3, M includes any 4 to 5 elements selected from V, Nb, Hf, Zr,Sc, Y, Ta, and Mo. The preparation method comprises the following steps that: pure metal raw materials are weighed according to the stoichiometric ratios of the elements contained in the TiCoSb-basedhigh-entropy thermoelectric material; and melting treatment, annealing treatment and discharge plasma sintering are performed sequentially. The TiCoSb-based high-entropy thermoelectric material of thepresent invention has low lattice thermal conductivity. The process conditions of the preparation method of the TiCoSb-based high-entropy thermoelectric material are easy to control, and therefore, the microstructure and physicochemical properties of the TiCoSb-based high-entropy thermoelectric material can be ensured; the preparation efficiency of the method is high; and production costs can bereduced.

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