The invention provides a bonding method for optimizing wafer edge peeling. A first wafer is provided, and the first wafer has a stepped structure at the edge thereof. The boding method further comprises the step of depositing a first oxide layer on the surface of the first wafer; depositing a second oxide layer on the edge surface of the first wafer; planarizing the second oxide layer; debugging the first wafer; and placing bonding surfaces of the first wafer and a second wafer correspondingly for bonding. The advantageous effects are that the filling of wafer edge pits caused by removing an edge photoresist is realized by a new filling process, then the process optimization is realized by changing the order of debugging, and the effect of reducing production costs without affecting product performance is also realized.