The invention provides a method for testing the hot spot temperature of a half-chip photovoltaic module. The method comprises the steps of S1, selecting a chip: determining battery pieces with the maximum electric leakage in the half-chip photovoltaic module; S2, selecting area: determining the worst covering area of the half-chip photovoltaic module; S3, selecting the hot spot: selecting the hotspot on each of the battery piece with the maximum electric leakage, and covering the non-hot spot area with the worst cover area; S4, exposure: connecting the positive and negative terminals of the half-chip photovoltaic module in a short-circuit manner, and putting the half-chip photovoltaic module into a steady state simulation box to exposure to determine the hot spot temperature of the half-piece photovoltaic module. The method for testing the hot spot temperature of a half-chip photovoltaic module can not only determine the worst cover area of the half-chip photovoltaic module, but alsocan quickly and easily analyze the hot spot temperature of the half-chip photovoltaic module, provides a basis for the hot spot analysis of the half-chip photovoltaic module, and facilitates the assessment of hot spot risk to improve the reliability of half-chip photovoltaic modules.