A composite conductive antireflective film for a crystalline silicon heterojunction solar cell comprises a conventional hydrogen hafnium co-doped indium oxide film having a refractive index of 1.8 to2.1 and a nano-column hydrogen hafnium co-doped indium oxide film having a refractive index of 1.4 to 1.6. The conventional hydrogen hafnium co-doped indium oxide film is deposited on the doped layerof the light-receiving surface of the solar cell. The nano-column hydrogen hafnium co-doped indium oxide film is deposited on the conventional hydrogen hafnium co-doped indium oxide film. The conventional hydrogen hafnium co-doped indium oxide film is RF magnetron sputtering deposited at a rate of 2 to 3 A/S. A substrate is parallel to the surface of a sputtering target material, and a film thickness is 70-90 nm. The nano-column hydrogen hafnium co-doped indium oxide film is RF magnetron sputtering deposited at rate of 0.5 to 1 A/S. A substrate has a certain angle to the surface of the sputtering target material, and a film thickness is 10-30 nm. The typical unheated composite conductive antireflective film has a resistivity of 4.3*10-4 [ohm]cm, a carrier concentration of 3.9*1020 cm-3, amobility of 56.5 cm2V-1s-1, and a weighted average reflectance of 3.53% in wavelength range of 500 to 1100 nm.. The composite film prepared by the invention functions as a cell conductive electrode and reduces light reflection.