The invention relates to a trench gate charge storage type IGBT (Insulated Gate Bipolar Translator), and belongs to the technical field of semiconductor power devices. According to the invention, a shielding trench structure which is equipotential with emitter metal is introduced on the basis of the traditional CSTBT device structure, and the trench depth of the shielding trench structure is enabled to be greater than that of a charge storage layer so as to shield an electric field of the charge storage layer. The introduction of the shielding trench structure plays an effective charge compensation effect for the charge storage layer, thus improves restrictions imposed on withstand voltage of the device by the doping concentration and thickness of the charge storage layer, and improves thebreakdown voltage of the device, thereby being conducive to improving the compromise between forward turn-on voltage drop Vceon and turn-off loss Eoff of the device, obtaining a wider short-circuit safe working area, being conducive to reducing the saturation current density of the device at the same time, and further improving the short-circuit safe working area of the device. In addition, the trench gate charge storage type IGBT significantly reduces the grid capacitance of the device and especially reduces the grid-collector capacitance, so that the switching speed of the device is improved, and the switching loss of the device and requirements for the ability of a gate driving circuit are reduced.